Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 1: Classification of defects
It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films:
— single-crystal GaN substrate;
— single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate;
— single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al2O3), silicon carbide (SiC) or silicon (Si) substrate.
It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is = 8°.