ISO 21820:2021
Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals
Product Details
This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 1016 cm-3 to 1018 cm-3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.