Codes & Standards - Purchase
SKU: iec_065093_en_fr
Published by IEC
Publication Year 2022
1 Edition
20 pages
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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