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IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
SKU: iec_065091_111939
Published by IEC
Publication Year 2022
1.0 Edition
25 pages
Product Details
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress