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IEC TS 62607-8-3:2023
Nanomanufacturing - Key control characteristics - Part 8-3: Nano-enabled metal-oxide interfacial devices - Analog resistance change and resistance fluctuation: Electrical resistance measurement
SKU: iec_062177_114260
Published by IEC
Publication Year 2023
1.0 Edition
18 pages
Product Details
IEC TS 62607-8-3:2023 This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol to determine the key control characteristics
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.